| PART |
Description |
Maker |
| M27V102 |
NND - 1 MBIT (64KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
|
SGS Thomson Microelectronics
|
| M27V800-150XM1TR M27V800 M27V800-100B1TR M27V800-1 |
NND - 8 MBIT (1MB X8 OR 512KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM 8兆x812KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29F100BB M29F100BT |
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory
|
ST Microelectronics
|
| M29F102BB 6387 |
1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory
From old datasheet system
|
STMicroelectronics
|
| M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M27W512 M27W512-100B6TR M27W512-100F6TR M27W512-10 |
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M36W0R6030B0ZAQ M36W0R6030T0 M36W0R6030T0ZAQ M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
ST Microelectronics
|
| AM42DL16X4D |
16 Mbit (x8/x16) Flash and 4 Mbit (x16) Static RAM (Preliminary)
From old datasheet system
|
AMD Inc
|
| M27W102-100B6TR M27W102-100F6TR M27W102-100K6TR M2 |
Hex Drivers 14-SO 0 to 70 1兆位64Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
Hex Drivers 14-PDIP 0 to 70
Hex Drivers 14-SOIC 0 to 70
PARTITION ISO FOR TERMINAL BLOCK
TEST PLUG FOR TERMINAL BLOCK
1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36DR432AD M36DR432AD10ZA6T M36DR432AD12ZA6T M36DR |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M36W432TG70ZA1T M36W432TG85ZA6T M36W432TG-ZAT M36W |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
意法半导
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
