| PART |
Description |
Maker |
| K9K2G0816QU0M |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Data Sheet
|
Samsung Electronic
|
| K9K4G08U0M |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
SAMSUNG
|
| K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G1 |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MX25L25635E MX25L25635EMI12G |
256M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MC-4R512FKE8D-840 |
Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R256FKE8S-845 MC-4R256FKE8S |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HN29V25611AT-50 |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
Renesas Electronics Corporation.
|
| MC-4R512FKE8D MC-4R512FKE8D-653 MC-4R512FKE8D-745 |
Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HN29V25611AT-50H |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
Renesas Electronics Corporation
|
| KVR1066D3S8S7-2G |
2GB 1Rx8 256M x 64-Bit PC3-1066 CL7 204-Pin SODIMM
|
List of Unclassifed Manufac...
|
| AT45DB2562NBSP AT45DB2562 |
256M bit, 2.7-Volt Only Dual-Interface Flash. This document is only available under NDA. Please cont
From old datasheet system
|
Atmel Corp
|
