| PART |
Description |
Maker |
| 1N3571 1N3573 1N3574 |
Diode Switching 150V 0.225A 2-Pin DO-35
|
New Jersey Semiconductor
|
| 20CTQ150-1 20CTQ150S 20CTQ150 |
150V 20A Schottky Common Cathode Diode in a D2-Pak package
150V 20A Schottky Common Cathode Diode in a TO-220AB package
150V 20A Schottky Common Cathode Diode in a TO-262 package
SCHOTTKY RECTIFIER 20 Amp
|
International Rectifier
|
| SB002-15SPA-E SB002-15SPA |
0.02 A, 150 V, SILICON, SIGNAL DIODE
DIODE SCHOTTKY 150V 0.02A 3SPA
|
Sanyo Semiconductor
|
| FCX555-15 |
150V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89
|
Diodes Incorporated
|
| BAS21M3T5G |
SOT-723 SS Switching Diode SIGNAL DIODE
High Voltage Switching Diode
|
ON Semiconductor
|
| 80CLQ150SCS |
80A 150V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package
|
International Rectifier
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex Power Semiconductors
Mitsubishi Electric Corporation
|
| MMBD4448HSDW-TP MMBD4448HAQW-TP |
DIODE SWITCHING 80V 250MA SOT363 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE
200mW Switching Diodes
|
Micro Commercial Components, Corp.
|
