| PART |
Description |
Maker |
| 16CYQ150C |
16A 150V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package
SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16 Amp, 150V
|
IRF[International Rectifier]
|
| 1N74 1N60D 1N68A 1N96A 1N72 1N73 1N93 1N63 1N61 1N |
Diode Switching 100V 10A 2-Pin
Diode Switching 50V 3A 2-Pin Case A
GOLD BOUNDED GERMANUM DIODE
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R
Diode Switching 125V 0.0003A 2-Pin DO-35
Diode Switching 50V 0.005A 2-Pin Case H
GOLD BONDED GERMANIUM DIODES
|
New Jersey Semiconductor
|
| SB002-15CP-E SB002-15CP |
0.02 A, 150 V, SILICON, SIGNAL DIODE
DIODE SCHOTTKY 150V 0.02A 3CP
|
Sanyo Semiconductor
|
| IRF5Y3315CM |
150V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 150V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.085ohm, Id=18A*)
|
IRF[International Rectifier]
|
| 6MBI225U-170 |
IGBT Module U-Series 1700V / 225A 6 in one-package
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MUR115 |
RECTIFIER DIODE,150V V(RRM),DO-41
From old datasheet system
|
on
|
| PP225D120 |
POW-R-PAK 225A / 1200V Half Bridge IGBT Assembly
|
POWEREX[Powerex Power Semiconductors]
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
