| PART |
Description |
Maker |
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HTCICC6402FUG HTCICC6403FUG |
HITAG RO64 Transponder IC
HTCICC64; HITAG RO64 transponder IC HTCICC6402FUG/AM<Uncased die|<<<1<Always Pb-free,;HTCICC6403FUG/AM<Uncased die|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| IXTD8P50-5B IXTD16P20-5B IXTD36P10-5B |
500 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
200 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
100 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
|
IXYS, Corp.
|
| 0011-40-2249 001140-2249 T63319A 0011402249 |
Terminator Die
|
Molex Electronics Ltd.
|
| 11-40-2118 1140-2118 0011-40-2118 001140-2118 |
Terminator Die
|
Molex Electronics Ltd.
|
| 11-40-2076 1140-2076 0011-40-2076 |
Terminator Die
|
Molex Electronics Ltd.
|
| 0011-40-2211 0011402211 |
Terminator Die
|
Molex Electronics Ltd.
|
| 11-40-2064 1140-2064 0011-40-2064 |
Terminator Die
|
Molex Electronics Ltd.
|
| 11-40-2001 0011402001 T8300A 1140-2001 0011-40-200 |
Terminator Die
|
Molex Electronics Ltd.
|
| 11-40-2009 T8307A 1140-2009 0011-40-2009 001140-20 |
Terminator Die
|
Molex Electronics Ltd.
|
