| PART |
Description |
Maker |
| FDS5351 |
60V N-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel 6.1 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel PowerTrench㈢ MOSFET 60V, 6.1A, 35mヘ
N-Channel PowerTrench? MOSFET 60V, 6.1A, 35mΩ
|
Fairchild Semiconductor, Corp.
|
| IRFP048 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)
|
International Rectifier
Power MOSFET
|
| IRFP054V |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A?
|
Power MOSFET
International Rectifier
|
| IRFSL7534 IRFB7534 IRFB7534PBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
60V Single N-Channel HEXFET Power MOSFET in a TO-220 package
|
International Rectifier
|
| IRFZ44EL IRFZ44ES IRFZ44ESTRL IRFZ44ESTRR |
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier
|
| IRFZ34VL IRFZ34VS |
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Advanced Process Technology
|
IRF[International Rectifier]
|
| IRF054 IRF054-15 |
60V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
HEXFET?TRANSISTORS 60V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 重复性雪崩和DV /受好评的HEXFET三极管通孔（TO-204AA/AE DT）的
Repetitive Avalanche Ratings
|
http://
International Rectifier, Corp.
|
| CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB154 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
|
Continental Device India Limited
|
| IRHNB7064 IRHNA3064 IRHNA4064 IRHNA7064 IRHNA8064 |
60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
|
IRF[International Rectifier]
|
