| PART |
Description |
Maker |
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| NE76184A-T1A NE76184A-SL NE76184A NE76184A-T1 NE76 |
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
http://
|
| BUK9MTT-65PBB |
Dual TrenchPLUS FET Logic Level FET
|
NXP Semiconductors N.V.
|
| MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| SI4884 SI4884-02 |
TrenchMOS(tm) logic level FET
From old datasheet system
TrenchMOS? logic level FET
TrenchMOS⑩ logic level FET
TrenchMOS logic level FET
TrenchMOSlogic level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FX6ASJ-03-T13 FX6ASJ-03 |
Transistors>Switching/MOSFETs
High-Speed Switching Use Pch Power MOS FET 高速开关使用沟道功率MOS FET
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| 2SK2503 A5800293 |
Transistors > MOS FET > Power MOS FET
Small switching (60V, 5A)
From old datasheet system
|
ROHM[Rohm]
|
