| PART |
Description |
Maker |
| 2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| STRS6707 STR-S6707 STR-S6708 STR-S6709 TRS6707 STR |
OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR
OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电5A，输出功率直20W50V输出，带双极开关晶体管的脱线开关稳压器)
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电2A，输出功率直20W50V输出，带双极开关晶体管的脱线开关稳压器)
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| CZT122 CZT127 |
SMD Bipolar Power Transistor PNP Darlington
SMD Bipolar Power Transistor NPN Darlington
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| HGTP14N37G3VL HGT1S14N37G3VLS HGT1S14N37G3VLS9A |
TRANS IGBT CHIP N-CH 380V 25A 3TO-263AB
14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANS PNP BIPOLAR 45V SOT323
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB
TRANSISTOR PNP BIPOLAR 45V SOT23
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| IRG4PH40KDPBF IRG4PH40KDPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSUALATED GATE BIPOLAR TRANSISTOR WITH YLTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2N1021A 2N457A 2N1166 2N1022A 2N1552 2N1554 |
germanium power transistors
Bipolar Junction Transistor
SILICON PNP TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semiconductors
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| 2N2905ALE3 JANSM2N2904AL |
PNP Transistor
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| 2N1483E3 2N1485E3 2N1484E3 |
BJT( BiPolar Junction Transistor)
PNP Transistor
|
Microsemi
|
