| PART |
Description |
Maker |
| NE32740A NE32708 NE32740B NE32702 NE32700 |
TRANSISTOR | BJT | NPN | 50MA I(C) | MACRO-X
TRANSISTOR | BJT | NPN | 50MA I(C) | MICRO-X
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | CHIP 晶体管|晶体管|叩| 12V的五（巴西）总裁| 50mA的一（c）|芯片
|
Panasonic, Corp.
|
| TSS-TC-2401 |
RATING:DC 12V 50mA
|
Suntan Capacitors
|
| NP1-6 NP2.8-12 NP12-6 NP7-12 NPL38-12 NP38-12 NP65 |
BLEIAKKU 6V 250G
BATTERY 12V 2.8AH
BATTERY 6V 12AH
BLEIAKKU 12V 2800G
BLEIAKKU NPL 12V 14.7KG
BLEIAKKU 12V 13800G
BLEIAKKU 12V 22700G
BLEIAKKU 6V 2200G
BLEIAKKU 12V 4000G
BLEIAKKU 12V 6.3KG
BLEIAKKU 12V 5000G
BLEIAKKU 12V 900G
BATTERY 6V 7AH
BATTERY 12V 2.3AH 蓄电2V 2.3AH
BLEIAKKU NPL 12V 24KG BLEIAKKU不良贷款12V4公斤
|
Yuasa Battery, Inc.
|
| SB005-09SPA SB005-09CPA |
90V, 50mA Rectifier(重复反向电压-90V，平均整流电0mA 整流
Schottky Barrier Diode
Shottky barrier diode, 90V/50mA rectifier
90V/ 50mA Rectifier
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor
|
| AT49F008A-90CC AT49F008A-90CI AT49F008A-90TC AT49F |
90ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
70ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
120ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
x8 Flash EEPROM x8闪存EEPROM
x8/x16 Flash EEPROM
|
Atmel, Corp.
|
| LT1213 |
28MHz, 12V/μs, Single Supply Dual Precision Op Amps(28MHz, 12V/μs, 单电源，双路精密运算放大
|
Linear Technology Corporation
|
| STK1040 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-202; Current, It av:10A; Holding Current:50mA
|
|
| 2SC2413K 2SC2058S 2SC4098 2SC4618 2SC5659 2SC5058S |
25V,50mA, 300MHz high-frequency amplifier transistor
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
High-frequency Amplifier Transistor(25V 50mA 300MHz)
High-frequency Amplifier Transistor(25V, 50mA, 300MHz)
High-frequency Amplifier Transistor(25V/ 50mA/ 300MHz)
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| 2SA1035 2SA1034 2SA1034/2SA1035 2SA1034T 2SA1035R |
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 50MA I(C) | TO-236AB 晶体管|晶体管|进步党| 35V的五（巴西）总裁| 50mA的一（c）|36AB
TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 50MA I(C) | TO-236AB
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
2SA1034. 2SA1035 - PNP Transistor
|
Rochester Electronics, LLC
Matsshita / Panasonic
|
| 4312U 4414FM 4312L |
LUEFTER DC PUR VERGUSS 12V
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits 19MM 24Vdc
LUEFTER DC 119 SUPER LOW NOISE 12V
|
|
| BY329-1700S |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Damper diode fast, high-voltage
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| CA3096AE CA3096CE |
TRANSISTOR,BJT,ARRAY,INDEPENDENT,40V V(BR)CEO,50MA I(C),DIP
TRANSISTOR,BJT,ARRAY,INDEPENDENT,24V V(BR)CEO,50MA I(C),DIP
From old datasheet system
|
Intersil Corp
|
