| PART |
Description |
Maker |
| PTMC210204MD |
Wideband LDMOS Two-stage Integrated Power Amplifi er 20 W, 28 V, 1805 ?2200 MHz
|
Infineon Technologies A...
|
| HMC590 |
high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifi
|
Hittite Microwave Corporation
|
| HMC413QS16G -HMC413QS16G |
Patch Cord; Cable Length:4ft; Approval Categories:Exceeds Category 6 Standards; Color:White; Features:4-Pair 23 AWG UTP modular cord, very small footprint, exceeds Category 6 standards RoHS Compliant: Yes
GaAs InGaP HBT MMIC POWER AMPLIFIER 1.6 - 2.2 GHz
GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz
|
Hittite Microwave Corpo...
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
| TQP770001 |
Bluetooth Two Stage (HBT) Power Amplifier (EDR Compliant)
|
TRIQUINT[TriQuint Semiconductor]
|
| RFPA3809PCK-410 RFPA3809PCK-411 RFPA3809SQ RFPA380 |
GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER
|
RF Micro Devices
|
| HMC407MS8G07 407MS8GE |
GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz
|
Hittite Microwave Corporation
|
| HMC414MS8G |
GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| HMC327MS8G07 327MS8GE |
GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz
|
Hittite Microwave Corporation
|
| 327MS8GE |
GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC921LP4E |
GaAs HBT MMIC 2 WATT POWER AMPLIFIER, 0.4 - 2.7 GHz
|
Hittite Microwave Corporation
|
| TQM71302406 |
3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module
|
TriQuint Semiconductor
|
| TQM713024 |
3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module
|
TriQuint Semiconductor
|
