| PART |
Description |
Maker |
| RFCM2680SB RFCM2680SR RFCM2680TR13 RFCM2680PCBA-41 |
45MHz TO 1003MHz GaAs/GaN POWER DOUBLER MODULE
|
RF Micro Devices
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CFK2062-P1 |
800 to 900 MHz 30 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| GP1001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| GX2441 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| CG2H40025 CG2H40025F CG2H40025P |
25 W, 28 V RF Power GaN HEMT
|
Cree, Inc
|
| G22001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| TGA2623-CP TGA2623-CP-15 |
10 to 11 GHz 32 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| HM2060-10A |
GaN Hybrid Power Amplifier
|
RFHIC
|
| TGA2624-CP TGA2624-CP-15 |
9 to 10 GHz, 16 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| HT2626-30A |
GaN Hybrid Power Amplifier
|
RFHIC
|
