| PART |
Description |
Maker |
| AN0110NA |
100 V, 100 om, N-channel enhancement-mode D-MOS FET 8-channel array
|
Topaz Semiconductor
|
| MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| PSMN034-100PS |
N-channel 100 V 34.5 m惟 standard level MOSFET in TO220.
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
N-channel 100 V 34.5 m standard level MOSFET in TO220. 32 A, 100 V, 0.0345 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| PPF150M |
N Channel MOSFET; Package: TO-254; ID (A): 21; RDS(on) (Ohms): 0.053; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 34 A, 100 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| PPF75N10N |
N Channel MOSFET; Package: TO-258; ID (A): 50; RDS(on) (Ohms): 0.025; PD (W): 300; BVDSS (V): 100; Rq: 0.42; 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
|
Microsemi, Corp.
|
| SUV85N10-10 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
|
VISAY[Vishay Siliconix]
|
| ZVP2110ASTZ UZVN3306ASTOB DIODESINC-ZVN3306ASMTA U |
230 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET TO-92 COMPATIBLE, E-LINE PACKAGE-3
270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
100 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
260 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
90 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
450 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes, Inc.
ZETEX PLC
DIODES INC
|
| SUM34N10-35 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175C MOSFET
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| SUD40N10-25 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175`C MOSFET
|
VISAY[Vishay Siliconix]
|
| UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC]
NEC Corp.
|
| ADL5802 ADL5802-EVALZ ADL5802ACPZ-R7 ADL580209 |
Dual Channel, High IP3, 100 MHz to 6 GHz Active Mixer
Dual Channel High IP3 100 MHz – 6 GHz Active Mixer; No of Pins: 24 100 MHz - 6000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER
|
Analog Devices, Inc.
|
| MMFT1N10E_D ON2216 MMFT1N10E MMFT1N10 |
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
|
