| PART |
Description |
Maker |
| MFP-A2422 |
GOAT ANTI ANTI-MOUSE IGG G (H L) A ANTIBODY
|
Mo Bi Tec
|
| NT90 NT90RHBSAC12VCB0.6 NT90RHBSAC12VCB0.9 NT90RNA |
Small size, light weight. Low coil power consumption, heavy contact load. Strong anti-shock and anti-vibration, high reliability, long life.
|
DB Lectro Inc.
DBLECTRO[DB Lectro Inc]
|
| NT90TNLBSAC24VSF0.9 NT90TNLADAC12VSB0.6 NT90TNLADA |
Small size, light weight. Low coil power consumption, heavy contact load. Strong anti-shock and anti-vibration, high reliability, long life. 体积小，重量轻。线圈功耗低，重接触载荷。强抗休克，抗振动，可靠性高，寿命长
|
DB Lectro Inc.
DB Lectro, Inc.
|
| SRIX4K-W4 SRIX4K SRIX4K-A3S SRIX4K-A3T SRIX4K-A4S |
13.56MHz Short Range Contactless Memory Chip With 4096 bit EEPROM / Anti-Collision and Anti-Clone Functions
13.56MHz Short Range Contactless Memory Chip With 4096 bit EEPROM, Anti-Collision and Anti-Clone Functions 13.56短距离非接触式与4096位EEPROM，防撞击，防克隆功能内存芯片
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| AOK30B135W1 |
Minimal gate spike due to high input capacitance
|
Alpha & Omega Semicondu...
|
| AOK20B135E1 |
Minimal gate spike due to high input capacitance
|
Alpha & Omega Semicondu...
|
| Q62702-F1287 Q62702-F1240 BF840 BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF/ IF amplifiers Low collector-base capacitance due to contact shield diffusion)
NPN Silicon RF Transistors (Suitable for common emitter RF IF amplifiers Low collector-base capacitance due to contact shield diffusion)
From old datasheet system
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| LXDC2HL10A-080 LXDC2HL1DA-087 LXDC2HL25A-053 LXDC2 |
Low EMI noise and small footprint due to Murata’s inductor-embedded ferrite substrate technology
|
Murata Manufacturing Co., Ltd.
|
| HGT1S7N60A4DS HGTP7N60A4D HGTG7N60A4D FN4827 |
AML42 Series, Solid State Indicator, Square, Compact Style, Lighted, 1 LED, Snap in panel mount 34 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
