| PART |
Description |
Maker |
| G310 G310-ST310 |
Anti-visible rays due to visible ray cut resin for detector type
connector type
|
KODENSHI KOREA CORP.
|
| CRX14_05 CRX14 CRX14-MQ CRX14-MQP |
Low Cost ISO14443 type-B Contactless Coupler Chip with Anti-Collision, CRC Management and Anti-Clone Function
|
STMICROELECTRONICS[STMicroelectronics]
|
| LGL29K-G2J1-24-Z Q65110A1746 |
Version 1.0 (Replacement in due course)
|
OSRAM GmbH
|
| NT90TNLBSAC24VSF0.9 NT90TNLADAC12VSB0.6 NT90TNLADA |
Small size, light weight. Low coil power consumption, heavy contact load. Strong anti-shock and anti-vibration, high reliability, long life. 体积小，重量轻。线圈功耗低，重接触载荷。强抗休克，抗振动，可靠性高，寿命长
|
DB Lectro Inc.
DB Lectro, Inc.
|
| IXA20I1200PB |
Easy paralleling due to the positive temperature
|
IXYS Corporation
|
| STN4536 |
Due N Channel Enhancement Mode MOSFET
|
Stanson Technology
|
| AOK30B135W1 |
Minimal gate spike due to high input capacitance
|
Alpha & Omega Semicondu...
|
| IXA12IF1200TC IXA12IF1200HB IXA12IF1200PB |
Easy paralleling due to the positive temperature coefficient of the on-state voltage
|
IXYS Corporation
|
| 4U-0010-0650-1 2U-0010-0148-8 2U-0010-0149-6 2U-00 |
This specification was revised due to the requirement described below.
This specification was revised due to the requirement described below.
|
3M Electronics
|
| Q62702-F1287 Q62702-F1240 BF840 BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF/ IF amplifiers Low collector-base capacitance due to contact shield diffusion)
NPN Silicon RF Transistors (Suitable for common emitter RF IF amplifiers Low collector-base capacitance due to contact shield diffusion)
From old datasheet system
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| AOK20B120E1 |
Low turn-off switching loss due to fast turn-off time
|
Alpha & Omega Semicondu...
|
