| PART |
Description |
Maker |
| IKW40N120H3 |
1200V high speed switching series third generation
|
Infineon Technologies A...
|
| 74LVC4245AD-T 74LVC4245ADB-T |
512K, 64K X 8, 2.5V HI-SPEED SER EE, IND, -40C to 85C, 14-TSSOP , TUBE 位总线收发
512K, 64K X 8M, 2.5V HI-SPEED SER EE, IND, -40C to 85C, 8-SOIC 208mil, TUBE
|
NXP Semiconductors N.V.
|
| IXSH35N120A |
1200V high voltage, high speed IGBT
|
IXYS[IXYS Corporation]
|
| BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| KSC2335 KSC2335OTU KSC2335R KSC2335RTU KSC2335Y KS |
NPN Epitaxial Silicon Transistor
High Speed, High Voltage Switching
High Speed/ High Voltage Switching
|
FAIRCHILD[Fairchild Semiconductor]
|
| FGW15N120VD |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
| FGW15N120HD |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
| 2SK2036 E001425 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCHING APPLICATIONS)
From old datasheet system
HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
| RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SK2608 |
Isolated Flyback Switching Regulator with 9V Output 隔离反激式开关稳9V输出
N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR APPLICATIONS)
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
