| PART |
Description |
Maker |
| MBRB2545CT |
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
|
Sangdest Microelectroni...
|
| 201CNQ035 201CNQ040 201CNQ045 |
SCHOTTKY RECTIFIER
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
|
Sangdest Microelectroni...
|
| 02013K4R7ABWTR 02013K4R7AASTR 02013K4R7AATTR 02013 |
High purity of electrodes for very low and repeatable
Thin-Film Technology
|
AVX Corporation
|
| SB3H100-E3_54 SB3H100-E3_73 SB3H90 SB3H9008 SB3H10 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| LTC4440ES6-5 LTC4440-5 LTC4440EMS8E-5 LTC4440EMS8E |
High Speed, High Voltage High Side Gate Driver; Package: SOT; No of Pins: 6; Temperature Range: -40°C to 125°C
High Speed, High Voltage, High Side Gate Driver
High Speed, High Voltage High Side Gate Driver; Package: MSOP; No of Pins: 8; Temperature Range: -40°C to 125°C 1.1 A BUF OR INV BASED MOSFET DRIVER, PDSO8
|
LINEAR TECHNOLOGY CORP
Linear Technology, Corp.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| T591B686M006ATE070 T591B336M006ATE080 |
T591/T598 High Humidity/High Temperature Automotive Grade Polymer Electrolytic, 2.5 - 50 VDC
|
Kemet Corporation
|
| BTA412Y BTA412Y-600B BTA412Y-600C BTA412Y-800B BTA |
12 A Three-quadrant triacs, insulated, high commutation, high temperature
|
NXP Semiconductors N.V.
|
| 3KASMC10AHE3/9AT 3KASMC10AHE3/57T 3KASMC24A |
Surface Mount Automotive Transient Voltage Suppressors (High Temperature Stability & High Reliability Conditions)
|
Vishay Siliconix
http://
|
| TPSMC7.5 TPSMC7.5A TPSMC6.8A TPSMC6.8AHE3_57T TPSM |
Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions
|
Vishay Siliconix
|
| 3KASMC10AHE3_9AT 3KASMC14 3KASMC16 3KASMC17 3KASMC |
Surface Mount Automotive Transient Voltage Suppressors (High Temperature Stability & High Reliability Conditions)
|
VISAY[Vishay Siliconix]
|
