| PART |
Description |
Maker |
| IRFB9N65 IRFB9N65A |
Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=8.5A)
650V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
| RBN75H65T1FPQ-A0 |
650V - 75A - IGBT
|
Renesas Electronics Corporation
|
| IXYA20N65C3D1 |
XPTTM 650V IGBT
|
IXYS Corporation
|
| FGH40N65UFD FGH40N65UFDTU |
650V, 40A Field Stop IGBT
|
Fairchild Semiconductor
|
| FGH40N65UFD |
650V, 40A, Field Stop IGBT
|
Fairchild Semiconductor
|
| RJP65S03DWA RJP65S03DWA-80W0 RJP65S03DWT RJP65S03D |
650V - 30A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RGTH60TK65 |
650V 30A Field Stop Trench IGBT
|
ROHM
|
| RGTH80TK65 RGTH80TK65GC11 |
650V 40A Field Stop Trench IGBT
|
ROHM
|
| RGTV60TS65 |
650V 30A Field Stop Trench IGBT
|
Rohm
|
| PG-TO220-3-FP IKA15N65F5 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
|
| IKA15N65H5 PG-TO220-3-FP |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| STP5NK65Z STP5NK65ZFP |
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
JFET; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:100mA; Gate-Source Cutoff Voltage Max, Vgs(off):-9V; Continuous Drain Current, Id:100mA; Current Rating:100mA; Gate-Source Breakdown Voltage:-25V RoHS Compliant: No
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH?Power MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
