| PART |
Description |
Maker |
| 40CPQ015 |
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
|
Sangdest Microelectroni...
|
| 303DMQ600 |
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
|
Sangdest Microelectroni...
|
| 157AVG063MGBJ 397AVG035MGBJ 126AVG160MGBJ 337AVG01 |
Small Size - High Temperature ?Low ESR ?High Ripple Current ?Stable with Temperature ?High Frequency
|
Illinois Capacitor, Inc...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 222212045222 222212045332 222212015102 22221201515 |
Aluminum Capacitors Axial High Temperature, High Ripple Current
|
Vishay Siliconix
|
| HVS2512 HVS1210 HVS4020 HVS1206 |
High Voltage / High Temperature Thick Film Chip Resistors
|
Riedon Powertron
|
| TSIC-506 |
High Resolution, High Precision, Rapid Response Temperature Sensor IC
|
Zentrum Mikroelektronik Dresden AG
|
| TMPG06-10 TMPG06-10A TMPG06-11 TMPG06-11A TMPG06-1 |
Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions
|
Vishay Siliconix
|
| T591B686M006ATE070 T591B336M006ATE080 |
T591/T598 High Humidity/High Temperature Automotive Grade Polymer Electrolytic, 2.5 - 50 VDC
|
Kemet Corporation
|
| T591 T591B107M006ATE025 T591B107M010ATE025 T591B10 |
T591/T598 High Humidity/High Temperature Automotive Grade Polymer Electrolytic, 2.5 - 50 VDC
|
Kemet Corporation
|
| TPSMA43A08 |
Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions
|
Vishay Siliconix
|
