| PART |
Description |
Maker |
| MT49H32M9 MT49H8M36 MT49H16M18 |
288Mb CIO Reduced Latency
|
Micron Technology, Inc.
|
| IS49NLS18160 |
288Mb (x9, x18) Separate I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
| K4C89083AF K4C89093AF |
288Mb x18 Network-DRAM2 Specification
|
Samsung semiconductor
|
| IS49NLC18160 IS49NLC36800 IS49NLC93200 |
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
| ST72324J2B6 ST72324J2T3 ST72324J4B6 ST72324K2T3 ST |
8-BIT MCU WITH NESTED INTERRUPTS, FLASH, 10-BIT ADC, 4 TIMERS, SPI, SCI INTERFACE
288Mb RLDRAM Component
|
STMicroelectronics
意法半导
|
| M36L0R7060T1 M36L0R7060B1 M36L0R7060B1ZAQE M36L0R7 |
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package
|
STMicroelectronics
ST Microelectronics, Inc.
|
| M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMicroelectronics
|
| M36P0R9060N0ZANE M36P0R9060N0ZANF M36P0R9060N0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package
|
Numonyx B.V
|
| GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM
12ns 256K x 18 4Mb sync burst SRAM
8.5ns 256K x 18 4Mb sync burst SRAM
8ns 256K x 18 4Mb sync burst SRAM
10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
| GS88218AB-150I GS88218AD-250 GS88218AB-250 GS88218 |
9Mb Burst SRAMs
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32 |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
