| PART |
Description |
Maker |
| BCR553 |
PNP Silicon Digital Transistor 进步党硅数字晶体
Digital Transistors - PNP Silicon Digital Transistor
|
INFINEON[Infineon Technologies AG]
|
| BCR58307 BCR583 |
500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon Digital Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| DTA114EM3T5G DTA144WM3T5G DTA114TM3T5G DTA114YM3T5 |
Digital Transistors (BRT)(数字晶体管（BRT 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Digital Transistors(BRT)
Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ONSEMI[ON Semiconductor]
|
| EMB4FHA |
PNP PNP Digital transistor (Corresponds to AEC-Q101)
|
ROHM
|
| BCR48 BCR48PN |
Digital Transistors - SOT363 package
NPN/PNP Silicon Digital Transistor Array
|
Infineon Technologies AG
|
| BCR19PN |
Digital Transistors - SOT363 package
NPN/PNP Silicon Digital Transistor Array
|
Infineon
|
| BCR169S BCR169SQ62702C2580 |
TRANSISTOR DIGITAL SOT363 晶体管数字SOT363封装
PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| UMB3NTN |
PNP PNP Digital transistor (with built-in resistors)
|
ROHM
|
| ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 3.5AI（丙）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 10A条一（c）|1
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 8A条一（c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 3A条一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五（巴西）总裁|5A一（c
|
Cypress Semiconductor, Corp.
Vicor, Corp.
Atmel, Corp.
Advanced Analogic Technologies, Inc.
EPCOS AG
|
| DTA114YCAT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
