| PART |
Description |
Maker |
| AMF-5B-040080-15-25P AMF-4B-040080-15-25P AMF-6B-0 |
4000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
12000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
20000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
8000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
27500 MHz - 31000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
37000 MHz - 41000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MITEQ, Inc.
MITEQ INC
|
| INA-34063 |
3.0 GHz Medium Power Silicon RFIC Amplifier(3.0 GHz中等功率硅射频集成电路放大器)
3V Fixed Gain. Medium Power Amplifier
3.0 GHz的中功率硅射频放大器.0千兆赫中等功率硅射频集成电路放大器）
|
Agilent(Hewlett-Packard)
|
| 2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| 2SB1189 2SB1238 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Medium power transistor
|
Rohm
|
| CR12CM-12A CR12CM-12A-A8 CR12CM-12A-13 CR12CM-12A- |
Thyristor Medium Power Use
600V - 12A - Thyristor Medium Power Use
|
Renesas Electronics Corporation
|
| 2SC3420 E000842 |
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1893 E000575 |
TRANSISTOR (STOROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) 晶体管（STOROBE闪光，中等功率放大器应用
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
|
| SF16JZ51 SF16GZ51 |
MEDIUM POWER CONTROL APPLICATIONS
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| KSB1116S KSB1116SYBU KSB1116SYTA KSB1116SYTANL |
PNP Epitaxial Silicon Transistor
Audio Frequency Power Amplifier Medium Speed Switching
From old datasheet system
Audio Frequency Power Amplifier Medium Speed Switching
|
FAIRCHILD[Fairchild Semiconductor]
|
| FXT458 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
From old datasheet system
|
ZETEX[Zetex Semiconductors]
|
