| PART |
Description |
Maker |
| ASI10599 HF100-12 |
NPN Silicon RF Power Transistor(Ic:20 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:20 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
|
| ASI10652 TVU150 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| ASI10615 HF250-50 |
NPN Silicon RF Power Transistor(Ic:40 A,Vcbo: 110 V,Vceo: 55V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:40 A,Vcbo: 110 V,Vceo: 55V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| ASI10748 VMB80-28F ALR015 ASI10511 ASI10770 MRF314 |
NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| ASI10669 UHBS15-2 ASI10541 ASI10564 ASI10606 ASI10 |
NPN Silicon RF Power Transistor(Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)) UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| SMLA42CSM |
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE
Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300V,Vceo:300V,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300V,Vceo:300V,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装（Vcbo00V，Vceo00V，Vebo6V的）（不适用沟道增强型，高电压功率马鞍山场效应管（Vcbo00V，Vceo00V，Vebo6V的）
|
SemeLAB
SEME-LAB[Seme LAB]
Motorola Mobility Holdings, Inc.
|
| 2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic
|
USHA India LTD
|
| CD9011 CD9011D CD9011E CD9011F CD9011G CD9011H CD9 |
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 273 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 44 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 40 - 59 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 54 - 80 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 72 - 108 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 97 - 146 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 132 - 198 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 182 - 273 hFE
|
Continental Device India Limited
|
| 2SC5211 |
High voltage VCEO=50V. Small package for mounting.Collector-base voltage VCBO 55 V
|
TY Semiconductor Co., Ltd
|
| 2N23867 |
1.000W Power PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE.
|
Continental Device India Limited
|
| SPJ-63S SPB-G56S MPE-24H SPB-64S SPB-G34 SPB-G34S |
Schottky Barrier Diodes (Power Surface Mount) 30V / 40V / 60V
Schottky Barrier Diodes (Power Surface Mount) 30V, 40V, 60V 6 A, SILICON, RECTIFIER DIODE
Schottky Barrier Diodes (Power Surface Mount) 30V, 40V, 60V 肖特基二极管（电源表面贴装）30V的，40V的，60V
Schottky Barrier Diodes (Power Surface Mount) 30V, 40V, 60V 5 A, 40 V, SILICON, RECTIFIER DIODE
Schottky Barrier Diodes (Power Surface Mount) 30V, 40V, 60V 3 A, 40 V, SILICON, RECTIFIER DIODE
|
http://
Sanken Electric Co., Ltd.
Sanken Electric Co.,Ltd.
SANKEN[Sanken electric]
|
|
