| PART |
Description |
Maker |
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
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General Electric Solid State GE Solid State
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| SP8855 SP8855E |
2.8GHz Parallel Load Professional Synthesiser MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test
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Mitel Semiconductor MITEL[Mitel Networks Corporation]
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| MCP6547 MCP6549 MCP6546 MCP6548 MCP6547-I/MS MCP65 |
The MCP6549 is an Open Drain, quad comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current of 600 nA and a maximum of 1 microamp and is 10V output capable. This device is offered in the sixteen lead The MCP6546 is an Open-Drain, single comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current ... The MCP6549 is an Open Drain, quad comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current ... The MCP6547 is an Open Drain, dual comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current of 600 nA and a maximum of 1 microamp and is 10V output capable. This device is offered in the eight lead PD The MCP6546 is an Open-Drain, single comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current of 600 nA and a maximum of 1 microamp and is 10V output capable. This device is offered in the eight lead The MCP6548 is an Open Drain, single comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current ... The MCP6547 is an Open Drain, dual comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current ... OPEN-DRAIN OUTPUT SUB-MICROAMP COMPARATORS
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MICROCHIP[Microchip Technology]
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| SP8830 SP8830ADG SP8830BDG DES9157201 DES9157201AC |
1.5GHz ÷ 10 Prescaler 1.5GHz 10 Prescaler 1.5GHz ± 10 Prescaler MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:13A; On-Resistance, Rds(on):15mohm; Rds(on) Test
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Mitel Semiconductor MITEL[Mitel Networks Corporation]
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| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
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Electronics Industry Public Company Limited EIC Semiconductor EIC[EIC discrete Semiconductors] EIC discrete Semiconduc...
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| 2SK1464 |
Drain Current ?ID=8A@ TC=25C
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Inchange Semiconductor ...
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| 2SK846 |
Drain Current ?ID=3A@ TC=25C
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Inchange Semiconductor ...
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| 2SK1465 |
Drain Current ?ID=8A@ TC=25C
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Inchange Semiconductor ...
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| 2SK996 |
Drain Current ?ID=4A@ TC=25C
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Inchange Semiconductor ...
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| 2SK1082 |
Drain Current ?ID=6A@ TC=25C
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Inchange Semiconductor ...
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| 2SK635 |
Drain Current ?ID=3A@ TC=25C
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Inchange Semiconductor ...
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| 2SK529 |
Drain Current ?ID=2A@ TC=25C
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Inchange Semiconductor ...
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