| PART |
Description |
Maker |
| W3EG72128S403D3 W3EG72128S403JD3 W3EG72128S202D3 W |
1GB - 2x64Mx72 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3EG264M72EFSUXXXD4 W3EG264M72EFSU403D4 W3EG264M72 |
1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGA
|
WEDC[White Electronic Designs Corporation]
|
| WV3EG264M72ESFR-D4 WV3EG264M72ESFR335D4-SG WV3EG26 |
1GB - 2x64Mx72 DDR SDRAM REGISTERED, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3HG264M72EERXXXAD7SG W3HG264M72EERXXXAD7MG W3HG26 |
1GB - 2x64Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP Mini-DIMM
|
WEDC[White Electronic Designs Corporation]
|
| EBD11ED8ADFB-7B EBD11ED8ADFB EBD11ED8ADFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 1GB的无缓冲DDR SDRAM的内存（128M的话x72位，2个等级）
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HYMD212G726ALS4-H HYMD212G726ALS4-K HYMD212G726ALS |
128Mx72|2.5V|M/K/H/L|x36|DDR SDRAM - Registered DIMM 1GB 128Mx72 | 2.5V的| /升| x36 | DDR SDRAM内存-内存1GB的注
Registered DDR SDRAM DIMM
128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| EBD11ED8ADFB-5C EBD11ED8ADFB-5 EBD11ED8ADFB-5B EBD |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks)
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| K4H1G0838M-TC_LB3 K4H1G0438M K4H1G0438M-TC_LA2 K4H |
1Gb M-die DDR SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYMD512G726BLF4N-J HYMD512G726BLF4N-D43 |
DDR SDRAM - Registered DIMM 1GB
|
Hynix Semiconductor
|
| HYMD512726BL8J-J HYMD512726BL8J-43 HYMD512726B8J |
DDR SDRAM - Unbuffered DIMM 1GB
|
Hynix Semiconductor
|
| HYMD212G726CLS4-H HYMD212G726CLS4-L HYMD212G726CLS |
DDR SDRAM - Registered DIMM 1GB
|
Hynix Semiconductor
|
| HYMD212G726CLS4M-K HYMD212G726CLS4M-H HYMD212G726C |
DDR SDRAM - Registered DIMM 1GB
|
Hynix Semiconductor
|
