| PART |
Description |
Maker |
| GS71108TP-10 GS71108TP-12 GS71108TP-12I GS71108TP |
15ns 128K x 8 1Mb asynchronous SRAM
12ns 128K x 8 1Mb asynchronous SRAM
10ns 128K x 8 1Mb asynchronous SRAM
128K X 8 STANDARD SRAM, 10 ns, PDSO32 0.400 INCH, SOJ-32
128K X 8 STANDARD SRAM, 12 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48
128K X 8 STANDARD SRAM, 12 ns, PDSO32 0.300 INCH, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48
128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
GSI[GSI Technology]
GSI Technology, Inc.
|
| GS72116TP-10 GS72116TP-15 GS72116TP GS72116J-15 GS |
15ns 128K x 16 2Mb asynchronous SRAM
8ns 128K x 16 2Mb asynchronous SRAM
10ns 128K x 16 2Mb asynchronous SRAM
12ns 128K x 16 2Mb asynchronous SRAM
|
GSI[GSI Technology]
|
| N01L163WN1A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
| IS61WV6416DALL/DALS IS61WV6416DBLL/DBLS |
64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| MT58L32L32P MT58L32L36P MT58L64L18P |
32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器)
32K x 36, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器)
64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器) 64K的18.3V的I / O的流水线，SCD的SyncBurst的SRAM兆，3.3V的输输出，流水线式，单循环取消选择，同步脉冲静态存储器
|
Micron Technology, Inc.
|
| CY7C464A CY7C462A CY7C460A 7C46XA CY7C462-15JC |
IC-SM 16KX9 CMOS FIFO
From old datasheet system
Asynchronous, Cascadable 8K/16K/32K/64K x9 FIFOs
|
Cypress
|
| MT58L32L32D MT58L32L36D MT58L64L18D |
32K x 36,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器)
64K x 18, 3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器)
32K x 32,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器) 32KX82,3.3 O的流水线，双氰胺SyncBurst的SRAM兆，3.3V的输输出，流水线式，双循环取消选择，同步脉冲静态存储器
|
Micron Technology, Inc.
Micrel Semiconductor, Inc.
|
| LC35V1000BTS-70U LC35V1000BM LC35V1000BM-70U LC35V |
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM
Static RAMs (1Mb)
Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
|
SANYO[Sanyo Semicon Device]
|
| GS72116AJ GS72116AJ-10 GS72116AJ-10I GS72116AJ-12 |
8ns 128K x 16 2Mb asynchronous SRAM
ACB 9C 9#16 SKT RECP WALL
ACB 5C 5#16S SKT RECP WALL
ACB 10C 10#16 PIN RECP WALL
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Aluminum Alloy; Series:ACA-B Reverse Bayonet; No. of Contacts:2; Connector Shell Size:12S; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle
128K x 16 2Mb Asynchronous SRAM 128K的16异步SRAMMb
ACB 19C 19#16 SKT RECP WALL 128K的16异步SRAMMb
ACB 4C 4#16 SKT RECP WALL 128K的16异步SRAMMb
ACB 8C 8#16 SKT RECP WALL 128K的16异步SRAMMb
|
http://
ETC[ETC]
GSI Technology
Electronic Theatre Controls, Inc.
|
