| PART |
Description |
Maker |
| AM41LV3204M M410000095 M410000096 AM41LV3204MT10IT |
Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM
|
SPANSION[SPANSION]
AMD[Advanced Micro Devices]
|
| 89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
| MX23C4000 MX23C4000MC-10 MX23C4000MC-12 MX23C4000M |
4M-BIT MASK ROM (8 BIT OUTPUT) 512K X 8 MASK PROM, 150 ns, PDSO32
4M-BIT MASK ROM (8 BIT OUTPUT) 512K X 8 MASK PROM, 90 ns, PDIP32
|
Macronix International Co., Ltd.
|
| A29L400AV A29L400A A29L400ATG-70 A29L400ATG-70F A2 |
512K X 8 Bit / 256K X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
AMICC[AMIC Technology]
|
| TC55VD818FF-150 TC55VD818FF-133 TC55VD818FF-143 |
512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步无转向静RAM) 12k字18位同步无具体时间的静态存储器（为512k字x18位同步无转向静态内存）
|
Toshiba Corporation
Toshiba, Corp.
|
| MBM29F040A-90 |
4M (512K ×8) BIT Flash Memoery(512K ×85V 电源电压闪速存储器)
|
Fujitsu Limited
|
| UPD448012GY-C10X-MJH UPD448012GY-C85X-MJH UPD44801 |
8M-bit(512K-word x 16-bit) Low power SRAM
|
NEC
|
| MX26LV800BXBC-70G MX26LV800TXBC-70G MX26LV800BXBC- |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PBGA48
|
Macronix International Co., Ltd.
http://
|
| GS8161E32D-166 GS8161E32D-166I GS8161E3T-200 GS816 |
14-Bit Registered Buffer With SSTL_2 Inputs and Outputs 48-TVSOP 0 to 70 100万1812k × 32的，12k × 36 35.7同步突发静态存储器
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M×18512k×32512k×36 18M位同步突发静态存储器
20-Bit SSTL_3 Interface Buffer With 3-State Outputs 64-TSSOP 0 to 70 100万1812k × 32的，12k × 36 35.7同步突发静态存储器
25-Bit Configurable Registered Buffer With Address-Parity Test 96-LFBGA 0 to 70 100万1812k × 32的，12k × 36 35.7同步突发静态存储器
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M×1812k×3212k×36 18M位同步突发静态存储器
Quad 2-input Exclusive-OR gates 14-PDIP 0 to 70 100万1812k × 32的，12k × 36 35.7同步突发静态存储器
25-Bit Configurable Registered Buffer with SSTL_18 Inputs and Outputs 96-LFBGA 0 to 70 100万1812k × 32的，12k × 36 35.7同步突发静态存储器
20-Bit SSTL_3 Interface Universal Bus Driver With 3-State Outputs 64-TSSOP 0 to 70
Quad 2-input Exclusive-OR gates 14-SOIC 0 to 70
13-Bit to 26-Bit Registered Buffer with SSTL_2 Inputs and Outputs 56-VQFN 0 to 70
|
http://
GSI Technology
Electronic Theatre Controls, Inc.
|
| A81L801 A81L801UG-70F A81L801TG-70F |
Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
|
AMIC Technology Corporation
|
| S29CD016G0MFFA202 S29CD016G0MFAA212 S29CD016G0JFAI |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位）6兆位12k × 32的位），2.5伏，只有突发模式，双启动，同步读/写闪存与VersatileI内存/输出
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位）6兆位512k × 32的位），2.5伏，只有突发模式，双启动，同步读/写闪存与VersatileI内存/输出
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 512K X 32 FLASH 2.7V PROM, 67 ns, PBGA80
|
Spansion Inc.
Spansion, Inc.
|
