| PART |
Description |
Maker |
| 2PB710 |
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-236VAR 晶体管|晶体管|进步党| 25V的五（巴西）总裁| 500mA的一（c）|36VAR
|
HIROSE ELECTRIC Co., Ltd.
|
| 2N3723 2N2787 2N706B/46 2N3409 2N5188 2N3728 |
30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-39
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-46
TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 800MA I(C) | TO-5
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5
|
SEMICOA CORP
|
| MMST5086 MMST5087 MMST5088 MMST5089 MMST7157 SST71 |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|达林顿|叩| 40V的五（巴西）总裁| 500mA的一（c）| SOT - 23封装
EZ-USB SX2™ High-Speed USB Interface Device
KIT EZ-USB SX2 DEVELOPMENT
IC, STATIC RAM, 512K X 8
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | 500MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | SOT-23
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 500MA I(C) | SOT-23
Low-Cost 3.3V Zero Delay Buffer
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | SOT-23VAR
PCIX I/O System Clock Generator with EMI Control Features
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 600MA I(C) | SOT-23
4-Mbit (128K x 36) Pipelined Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
KIT DEVELOPMENT EZ-USB FX2LP
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | SOT-23VAR
TRANSISTOR|BJT|NPN|25VV(BR)CEO|200MAI(C)|SOT-23VAR
TRANSISTOR|BJT|NPN|30VV(BR)CEO|200MAI(C)|SOT-23VAR
TRANSISTOR|BJT|PNP|50VV(BR)CEO|200MAI(C)|SOT-23VAR
|
|
| CSC2001 CSA952 CSA952K CSA952L CSA952M CSA9529AW C |
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 90 - 180 hFE
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 135 - 270 hFE
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 200 - 400 hFE
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 90 - 400 hFE
PNP EPITAXIAL PLANAR SILICON TRANSISTOR 进步党平面外延硅晶体
|
Continental Device India Limited
CDIL
Continental Device India, Ltd.
|
| 2SD894 |
NPN Epitaxial Planar Silicon Transistor 25V/1.5A Driver Applications
|
Sanyo
|
| 2SC3807MP |
NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| 2SC1213A 2SC1213AK 2SC1213AD 2SC1213AKB 2SC1213AKD |
NPN transistor for Low frequency amplifier, 50V, 500mA
Silicon NPN Epitaxial
|
HITACHI[Hitachi Semiconductor]
|
| 2SC3438 |
500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368
FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
ISAHAYA[Isahaya Electronics Corporation]
|
| 2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SD2537T100V |
Medium Power Transistor (25V, 1.2A)
|
Rohm
|
| 2SD2537 |
Medium Power Transistor (25V 1.2A)
|
ROHM[Rohm]
|
| 2SB1035 |
900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447
SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION
|
Isahaya Electronics Corporation
|
