| PART |
Description |
Maker |
| STP43N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STF28N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STF24N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| CZTA44 |
NPN Silicon Extremely High Voltage Transistor
|
Guangdong Kexin Industrial Co.,Ltd
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
| CES2316 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| AP2121N-3.0TRE1 AP2121N-3.3TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
http://
|
| AP2121AK-1.8TRE1 AP2121AK-2.5TRG1 AP2121AK-1.2TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| CES2308 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| STBP60L60A |
Super high dense cell design for extremely low RDS(ON).7
|
SamHop Microelectronics...
|
