| PART |
Description |
Maker |
| B82500-C-A8 B82500 B82500-C-A10 B82500-C-A2 B82500 |
VHF chokes with ferrite core Rated voltage 250 V dc/ac Rated current 0,2 to 2 A Rated inductance 120 to 3900 mH
|
EPCOS[EPCOS]
|
| BUZ101 C67078-S1350-A2 BUZ101E3045 BUZ101STS |
N-Channel SIPMOS Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance) 29 A, 50 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
http://
|
| BUZ103SL Q67040-S4008-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) 28 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
High Speed CMOS Logic 12-Stage Binary Counter 16-PDIP -55 to 125 SIPMOS功率晶体管（N通道增强模式的逻辑电平雪崩额定dv / dt的评价）
SIPMOS ? Power Transistor
|
SIEMENS AG
Infineon
Siemens Semiconductor Group
|
| RFP30N06LE RF1S30N06LE RF1S30N06LESM |
30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs
30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
|
Fairchild Semiconductor
HARRIS[Harris Corporation]
|
| BUZ104SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Infineon Technologies AG
|
| BUZ103S Q67040-S4009-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature)
|
Infineon
Siemens Semiconductor Group
SIEMENS AG
|
| RF1K49157 |
6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET Enhancement Mode Power MOSFET
6.3A, 30V, AVALANCHE RATED, SINGLE N-CHANNEL LITTLEFET⒙ ENHANCEMENT MODE POWER MOSFET
6.3A, 30V, Avalanche Rated, Single N-Channel LittleFETEnhancement Mode Power MOSFET
|
Fairchild Semiconductor Corporation
|
| RF1K49086 |
3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET Enhancement Mode Power MOSFET
3.5A/ 30V/ Avalanche Rated/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET
3.5A, 30V, AVALANCHE RATED, DUAL N-CHANNEL LITTLEFET⒙ ENHANCEMENT MODE POWER MOSFET
3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFETEnhancement Mode Power MOSFET
|
Fairchild Semiconductor Corporation
|
| IXTA110N055T7 |
112 A, 55 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
N-Channel Enhancement Mode Avalanche Rated
|
IXYS CORP
IXYS Corporation
|
| IRFF9220 2N6847 JANTX2N6847 JANTXV2N6847 |
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
|
International Rectifier
|
| C62122-A132-B91 B84111-A-A10 B84111-A-A110 B84111- |
SIFI-A for normal insertion loss Rated voltage 250 V~, 50/60 Hz Rated current 1 A to 20 A
|
EPCOS[EPCOS]
|
