| PART |
Description |
Maker |
| 2089-6210-00 2089-6203-00 2089-6206-00 2089-6207-0 |
Two-Four-. & Eight-Way Isolated Power Dividers Wilkinson
Two-Four-. & Eight-Way Isolated Power Dividers Wilkinson 二，四
Two-锛?Four-. & Eight-Way Isolated Power Dividers Wilkinson
|
Molex, Inc.
Littelfuse, Inc.
|
| PDW06398 |
6GHz 2-way Wilkinson Power Divider
|
Dielectric Laboratories...
|
| CHR2391-99F CHR2391-9900 |
12-16GHz Integrated Down Converter
|
United Monolithic Semic...
|
| CHA4664-QGG |
5.5-16GHz Variable Gain Amplifier
|
United Monolithic Semiconductors
|
| FMA3014 |
12.7-16GHZ MMIC LIMITING AMPLIFIER
|
Filtronic Compound Semiconductors
|
| CHA6042-99F_00 CHA6042 CHA6042-99F/00 |
Circular Connector; No. of Contacts:23; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Pin; Circular Shell Style:Cable Receptacle; Insert Arrangement:16-23
13-16GHz High Power Amplifier
|
UMS[United Monolithic Semiconductors]
|
| 2SC5320 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: FT=16GHz series)
|
TOSHIBA
|
| 2SC5317FT |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: fT=16GHz series)
|
TOSHIBA
|
| MCH4020-TL-H MCH402012 ENA1280A ENA1280 |
RF Transistor, 8V, 150mA, fT=16GHz, NPN Single MCPH4
NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier
|
ON Semiconductor
Sanyo Semicon Device
|
| CHM1483-QFG |
12-16GHz Direct Quadrature Modulator
|
United Monolithic Semic...
|
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| 45912-0026 0459120026 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 4 Segments (Power, Power, Signal, Power Sequence), Press-Fit
|
Molex Electronics Ltd.
|
