| PART |
Description |
Maker |
| EN29LV160B-70TP EN29LV160B-90BP EN29LV160B-90TIP E |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 16兆位048K × 8 1024K x 16位）闪存引导扇区闪存，CMOS 3.0伏，
|
Eon Silicon Solution, Inc.
|
| A29800 A29800UV-90 A29800UM-90 A29800TM-90 A29800T |
240 x 128 pixel format, LED or EL Backlight 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
PULSER PROBE 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
Aerials (Antennas); Bandwidth Max:500MHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
Dipole Antenna; Bandwidth Max:2.2GHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
240 x 128 pixel format, CFL Backlight with power harness
128 x 64 pixel format, LED Backlight available
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
| EDI8F321024C15MZC EDI8F321024C20MZC EDI8F321024C25 |
15ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module
20ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module
25ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module
|
White Electronic Designs
|
| EN39SL160H EN39SL160H-70BI EN39SL160H-70BIP EN39SL |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
|
Eon Silicon Solution Inc.
|
| LY61L102416AGL-10 LY61L102416AGL-10I LY61L102416AG |
1024K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| MN65702H |
Low Power 8-Bit, 3-Channel CMOS D/A Converter for Image Processing PARALLEL, 8 BITS INPUT LOADING, 0.03 us SETTLING TIME, 8-BIT DAC, PQFP48
Low Power 8-Bit 3-Channel CMOS D/A Converter for Image Processing
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| EN29LV160BB-70TIP EN29LV160BB-70BIP EN29LV160BT-70 |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
|
| EN29LV160 |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
|
| EN29LV800B EN29LV800B70RS EN29LV800B70RSI EN29LV80 |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory/ CMOS 3.0 Volt-only
|
ETC
Eon Silicon Solution
|
| ST27C1001 |
1024K CMOS UV Erasable PROM
1024K ( 128K X 8 ) CMOS UV ERASABLE PROM
|
ST Microelectronics
STMicroelectronics
|
