PART |
Description |
Maker |
PNP3055E |
PowerMOS transistor. Drain-source voltage 60 V. Drain current(DC) 12 A.
|
Philips
|
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A.
|
General Electric Solid State
|
SP8855 SP8855E |
2.8GHz Parallel Load Professional Synthesiser MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test
|
Mitel Semiconductor MITEL[Mitel Networks Corporation]
|
HCS05DMSR FN3557 HCS05MS HCS05D HCS05HMSR HCS05K H |
Inverter, Hex, Open Drain, Rad-Hard, High-Speed, CMOS, Logic From old datasheet system JFET-N-CHANNEL SWITCH Radiation Hardened Hex Inverter with Open Drain HC/UH SERIES, HEX 1-INPUT INVERT GATE, UUC14 JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Current Rating:50mA; Voltage Rating:30V
|
INTERSIL[Intersil Corporation] Intersil, Corp. HARRIS SEMICONDUCTOR
|
IRFF130 IRFF131 IRFF132 IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
|
General Electric Solid State GE Solid State
|
2N20 |
Drain Current ID= 2A@ TC=25C
|
Inchange Semiconductor ...
|
2SK845 |
Drain Current ?ID=5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1603 |
Drain Current ?ID= 2.5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK934 |
Drain Current ?ID=8A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1460 |
Drain Current ?ID=3.5A@ TC=25C
|
Inchange Semiconductor ...
|
2N80 |
Drain Current ID= 2.4A@ TC=25C
|
Inchange Semiconductor ...
|