| PART |
Description |
Maker |
| SIGC18T60UN |
IGBTs - HV Chips - SIGC18T60UN, 600V, 20A
|
Infineon
|
| SIGC07T60NC |
IGBTs - HV Chips - SIGC07T60NC, 600V, 6A
|
Infineon
|
| SIGC104T170R2C |
IGBTs - HV Chips - SIGC104T170R2C, 1700V, 50A
|
Infineon
|
| SIGC156T120R2CS |
IGBTs - HV Chips - SIGC156T120R2CS, 1200V, 100A
|
Infineon
|
| SIGC81T120R2CL |
IGBTs - HV Chips - SIGC81T120R2CL, 1200V, 50A
|
Infineon
|
| SIGC25T60NC |
IGBTs - HV Chips - SIGC25T60NC, 600V, 30A
|
Infineon
|
| Q67041-S2856-A001 Q67041-S2856-A002 SIGC18T60SNC S |
IGBTs - HV Chips - SIGC18T60SNC, 600V, 20A
IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| BM-41EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-41EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管（IGBTs）（绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
