| PART |
Description |
Maker |
| K7A321800M-QC25 K7A323600M-QC20 K7A321800M-QC20 K7 |
1Mx36 & 2Mx18 Synchronous SRAM
1Mx36 & 2Mx18 Synchronous SRAM 1Mx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7N321801M K7N323601M DSK7N323601M |
1Mx36 & 2Mx18-Bit Pipelined NtRAM
1Mx36 & 2Mx18-Bit Pipelined NtRAM 1Mx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-F |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7B323625M K7A321800M-QC14 K7B323625M-QC6575 K7A32 |
1Mx36 & 2Mx18 Synchronous SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7R323684C K7R320984C K7R321884C |
1Mx36, 2Mx18 & 4Mx9 QDR II b4 SRAM
|
Samsung semiconductor
|
| K7K3236T2C K7K3218T2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7N323601MK7N321801M |
1Mx36 & 2Mx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| IS61DDP2B22M18A IS61DDP2B21M36A/A1/A2 IS61DDP2B22M |
2Mx18, 1Mx36 36Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| DSK7N163601A K7N163601 K7N163601A-QFCI13 K7N163601 |
1Mx36 & 2Mx18 Flow-Through NtRAM
512Kx36 & 1Mx18 Pipelined NtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7A323630C K7A321830C K7A321830C-PC20 K7A321830C-P |
1M X 36 CACHE SRAM, 3.1 ns, PQFP100
1Mx36 and 2Mx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
| XC1700E XC1701LPC20C XC1701LPC20I XC1701LPD8C XC17 |
Configuration PROM.
XC1700E and XC1700L Series Configuration PROMs
IC,EPROM,128KX1,CMOS,DIP,8PIN,PLASTIC
From old datasheet system
Configuration PROMs 4M X 1 CONFIGURATION MEMORY, PQFP44
Configuration PROMs 256K X 1 CONFIGURATION MEMORY, PQCC20
|
Xilinx Inc
XILINX[Xilinx, Inc]
Xilinx, Inc.
|
