| PART |
Description |
Maker |
| UPD705100GJ-100-8 UPD705100GJ-100-8EU |
2-WIRE FACTORY PROGRAMMED W/TIN PLATING
V830TM 32-BIT MICROCONTROLLER V830TM 32位微控制
|
NEC Corp.
NEC, Corp.
|
| A1143 |
Two-Wire Factory-Programmed Chopper-Stabilized Unipolar Hall-Effect Switch
|
Allegro MicroSystems
|
| 74LVTH162240 74LVT162240 74LVT162240MEAX 74LVT1622 |
Low Voltage 16-Bit Inverting Buffer/Line Driver with 3-STATE Outputs and 25-Ohm Series Resistors in the Outputs
Low Voltage 16-Bit Inverting Buffer/Line Driver with 3-STATE Outputs and 25 Ohm Series Resistors in the Outputs
Quad 4-Bit Buffer/Driver
1K, 128 x 8, 2.5V SER EE, -40C to 85C, 8-MSOP, T/R 位缓冲器/驱动
1K, 128 X 8, 2.5V SER EE, -40C to 125C, 8-MSOP, T/R
|
Fairchild Semiconductor
Ohmite Mfg. Co.
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| HD14562B HD14562BP |
4000/14000/40000 SERIES, 128-BIT RIGHT SERIAL IN SERIAL OUT SHIFT REGISTER, TRUE OUTPUT, PDIP14
128-bit Static Shift Register
|
HITACHI[Hitachi Semiconductor]
|
| 7700H0021 7700H0023 |
5V, SINGLE CHANNEL, 12 BIT SERIAL A/D CONVERTER, -40C to 125C, 5-SOT-23, T/R 接口IC
5V single chan 12 Bit Ser A/D Conv w/software addressble 12C ntrfc address 011. 接口IC
|
Glenair, Inc.
|
| TC9WMB2FK TC9WMB1FK |
1024-Bit (128 x 8 Bit) / 2048-Bit (256 x 8 Bit) 2-Wire Serial E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| RIVA128ZX STG3005A2S |
128-BIT 3D MULTIMEDIA ACCELERATOR 128D多媒体加速器
128-Bit 3D Multimedia Accelerator(128D多媒体加速器) 128D多媒体加速器28位三维多媒体加速器
128-BIT 3D MULTIMEDIA ACCELERATOR 1283D多媒体加速器
|
STMicroelectronics N.V.
Wi2Wi, Inc.
|
| AMD29F010B AM29F010B-90PI AMD29F010B-45EE AMD29F01 |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package; A IRLML2402 with Tape and Reel Packaging
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位28亩8位）的CMOS 5.0伏只，统一部门快闪记忆
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位128亩8位）的CMOS 5.0伏只，统一部门快闪记忆
|
Advanced Micro Devices, Inc.
|
|
