| PART |
Description |
Maker |
| TPMR10D |
10A, 200V - 600V High Current Density Switchmode Ultrafast Surface Mount Rectifiers
|
Taiwan Semiconductor Co...
|
| 100JB12L 35MB100A 35MB10A 35MB120A 100JB10L 100JB1 |
10 to 35 Amp Rectifier Bridges
V(rrm): 400V; 25A rectifier bridge
V(rrm): 1200V; 35A rectifier bridge
V(rrm): 100V; 25A rectifier bridge
V(rrm): 1000V; 25A rectifier bridge
V(rrm): 1000V; 10A rectifier bridge
V(rrm): 100V; 10A rectifier bridge
V(rrm): 400V; 10A rectifier bridge
V(rrm): 1200V; 10A rectifier bridge
V(rrm): 50V; 10A rectifier bridge
V(rrm): 200V; 10A rectifier bridge
V(rrm): 600V; 10A rectifier bridge
V(rrm): 800V; 10A rectifier bridge
V(rrm): 1200V; 25A rectifier bridge
V(rrm): 1000V; 35A rectifier bridge
V(rrm): 50V; 25A rectifier bridge
V(rrm): 600V; 25A rectifier bridge
|
IRF[International Rectifier]
|
| RJQ6008DPM-00T0 RJQ6008DPM-15 |
600V - 10A - IGBT and Diode High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGP10NB60SDFP |
20 A, 600 V, N-CHANNEL IGBT, TO-220AB
N-CHANNEL 10A - 600V - TO-220FP PowerMesh⑩ IGBT
N-CHANNEL 10A - 600V - TO-220FP PowerMesh IGBT
N-CHANNEL 10A 600V TO-220FP POWERMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| BP10-005L BP10-01L BP10-08L BP10-10L BP10-02L BP10 |
10A HIGH CURRENT BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五（巴西）直| 10A条（丁）|254
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五（巴西）直| 5A条（丁）|54
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 7A条（丁）|
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五（巴西）直|3A条（丁）|10AC
TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五（巴西）直| 5A条（丁）|220
|
MITSUMI ELECTRIC CO., LTD.
Infineon Technologies AG
HIROSE ELECTRIC Co., Ltd.
|
| JMK316BJ226ML-T501 LTM4600EV LTM4600IV LTM460006 L |
10A High Effi ciency DC/DC 渭Module
10A High Effi ciency DC/DC μModule
10A High Efficiency DC/DC µModule; Package: LGA; No of Pins: 104; Temperature Range: -40°C to 85°C
10A High Effi ciency DC/DC μModule
|
Linear Technology
LINEAR TECHNOLOGY CORP
|
| S10VB20 |
Bridge Diode(200V 10A)
|
Shindengen Electric Mfg...
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| FFD10UP20S |
10A, 200V, Ultrafast Diode
|
Fairchild Semiconductor
|
| FFB20UP20DN |
10A, 200V Ultrafast Rectifiers
|
Fairchild Semiconductor
|
| FFB20UP20DN10 FFB20U20DNF085 |
10A, 200V Ultrafast Dual Rectifiers
|
Fairchild Semiconductor
|
| BUV28 |
POWER TRANSISTORS(10A,200V,80W)
|
Mospec Semiconductor
|
