PART |
Description |
Maker |
LY62L20488AGL-55SL |
2048K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
EN29LV320AT-70B EN29LV320AT-70BI EN29LV320AT-70BIP |
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
|
EN29LV160CB-70BIP EN29LV160CB-70TIP EN29LV160CT-70 |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
|
BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor] Brilliance Semiconducto...
|
LC87F1A32A |
CMOS IC FROM 32K byte, RAM 2048K byte on-chip 8-bit 1-chip Microcontroller with Full-Speed USB
|
Sanyo Semicon Device
|
28F020 |
28F020 2048K (256K X 8) CMOS FLASH MEMORY
|
Intel Corporation
|
BS62LV2563TC BS62LV2563TI BS62LV2563 BS62LV2563DC |
5V ECL Differential Receiver; Package: SOIC; No of Pins: 8; Container: Rail Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM32K的8 Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM2K的8
|
Brilliance Semiconducto... BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
TMP87C409BN TMP87C409BM 87C809 TMP87C809BN TMP87C8 |
(TMP87Cx09xx) CMOS 8-bit Microcontroller Low Voltage, Low Power, 16-/24-Bit, Dual Sigma Delta ADC; Package: EVALUATION BOARDS; No of Pins: -; Temperature Range: TBD
|
Toshiba Semiconductor Toshiba Corporation
|
BS616LV8017 BS616LV8017FIP70 BS616LV8017EC BS616LV |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit Asynchronous 8M(512Kx16) bits Static RAM Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
Brilliance Semiconducto... BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
KM616FS4110ZI-10 KM616FS4110ZI-7 |
100ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM 70ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
|
Samsung Electronic
|