PART |
Description |
Maker |
IXXH75N60C3D1 |
XPTTM 600V IGBT
|
IXYS Corporation
|
IXYH40N120B3 |
1200V XPTTM IGBT
|
IXYS Corporation
|
IXYH12N250C |
High Voltage XPTTM IGBT
|
IXYS Corporation
|
IXYN100N120C3H1 |
1200V XPTTM IGBT GenX3TM w/ Diode
|
IXYS Corporation
|
IXYH16N250CV1HV |
High Voltage XPTTM IGBT w/ Diode
|
IXYS Corporation
|
IXYB82N120C3H1 |
1200V XPTTM IGBT GenX3TM w/ Diode
|
IXYS Corporation
|
IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
QIQ0645002 |
Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode
|
POWEREX[Powerex Power Semiconductors]
|
IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 18A条一(c)|63AB INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度(VCES和\u003d 600V电压的Vce(on)典\u003d.4V,@和VGE \u003d 15V的,集成电路\u003d 18A条) INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A) 600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
HGTG30N60B3D |
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 带超快二极管N沟道绝缘栅双极型晶体 60 A, 600 V, N-CHANNEL IGBT, TO-247
|
Intersil, Corp.
|
IRG4BC10KD IRG4BC10KDPBF |
9 A, 600 V, N-CHANNEL IGBT, TO-220AB INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A) 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package
|
International Rectifier
|