| PART |
Description |
Maker |
| 1064101200-17 |
QSFP to QSFP Quad Data Rate PSM4 Active Optical Cable, 40 Gbps Data Rate
|
Molex Electronics Ltd.
|
| 1064101200 |
QSFP to QSFP Quad Data Rate PSM4 Active Optical Cable, 40 Gbps Data Rate
|
Molex Electronics Ltd.
|
| K4D26323RA-GC |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| ADN2811ACP-CML |
Dual Rate Limiting Amplifier and Clock and Data Recovery IC
|
Analog Devices
|
| GS8170DD18GC-333IT GS8170DD18C-333I GS8170DD18C-25 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM
1M X 18 STANDARD SRAM, 1.6 ns, PBGA209
|
GSI TECHNOLOGY
|
| SY88933V SY88933VKC SY88933VKCTR SY88933VKI SY8893 |
3.3V/5V 1.25Gbps PECL LOW-POWER LIMITING POST AMPLIFIER 3.3V/5V的达1.25Gbps PECL的低功率限幅后置放大
|
Micrel Semiconductor, Inc.
MICREL[Micrel Semiconductor]
|
| DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W972GG6JB W972GG6JB-25 |
16M ?8 BANKS ?16 BIT DDR2 SDRAM
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| EVAL-ADN2817EBZ ADN2817 ADN2818 EVAL-ADN2818EBZ |
Continuous Rate 10 Mbps to 2.7 Gbps Clock and Data Recovery ICs
Continuous Rate 10 Mbps to 2.7 Gbps Clock and Data Recovery IC (With High Sensitivity Limiting Amp)
|
Analog Devices
|
| ADN2817ADN2818 ADN2818ACP-RL ADN2818ACP-RL7 ADN281 |
Continuous Rate 12.3Mb/s to 2.7Gb/s Clock and Data Recovery ICs
Continuous Rate 12.3Mb/s to 2.7Gb/s Clock and Data Recovery IC (With High Sensitivity Limiting Amp)
|
AD[Analog Devices]
Analog Devices, Inc.
|
