| PART |
Description |
Maker |
| MPXV6115VC6U |
High Temperature Accuracy ntegrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
FREESCALE[Freescale Semiconductor, Inc]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| HTSC0402-100NF |
High Temperature Silicon Capacitor
|
Micross Components
|
| MP3H6115AC6U MP3H6115AC6T1 MP3H6115A6T1 MP3H6115A6 |
High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure, On-Chip Signal Conditioned
High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure On-Chip Signal Conditioned, Temperature Compensat
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MPXHZ6400AC6T1 MPXA6400A MPXA6400AP |
High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Freescale Semiconductor, Inc
|
| BYZ35A22 BYZ35A2209 BYZ35A27 BYZ35A33 BYZ35A39 BYZ |
Silicon-Protectifiers with TVS characteristic ?High Temperature Diodes
|
Diotec Semiconductor
|
| MPXV6115V MPXV6115VC6T1 MPXV6115VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Freescale Semiconductor, Inc
|
| GB01SHT12-CAU-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| SMA6J-85ATR SMA6J-85CATR SMA6J33A-TR STMICROELECTR |
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
High junction temperature Transil
|
STMicroelectronics
|
| C1206C105K3NACTU |
Ceramic, 150C-(CxxxxC), 1 uF, 10%, 25 V, 1206, X8L, SMD, MLCC, High Temperature, Temperature Stable
|
Kemet Corporation
|
|
