| PART |
Description |
Maker |
| SI7136DP-RC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4378DYRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI7431DPRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4856ADY-RC |
R-C Thermal Model Parameters
|
VAISH[Vaishali Semiconductor]
|
| CFH800 |
Typical Common Source S - Parameters
|
Infineon Technologies A...
ETC
INFINEON[Infineon Technologies AG]
|
| ST13003DN |
Low spread of dynamic parameters
|
STMicroelectronics
|
| AN1228 |
RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE
|
SGS Thomson Microelectronics
|
| MR18R16228DF0 MR16R1622 MR18R1622DF0 MR16R16224DF0 |
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| IRFS4020PBF IRFS4020PBF-15 |
Key parameters optimized for Class-D audio amplifier applications
|
International Rectifier
|
| 23C21F-40ML5 |
A wide variety of transmissionline topologies and pcb-parameters like permittivity
|
Rosenberger Hochfrequen...
|
| IE-V850E-MC-A |
Main in-circuit emulator board for V850E/MA1
Main in-circuit emulator board for V850E/IA1
|
NEC
|
| IRFB4212 IRFB4212PBF |
Key parameters optimized for Class-D audio amplifier applications
Key parameters optimized for Class-D audio amplifier applications
|
Kersemi Electronic Co., Ltd...
Kersemi Electronic Co.,...
|
