| PART |
Description |
Maker |
| GVA-84-15 |
Monolithic Amplifier DC-7 GHz
|
Mini-Circuits
|
| GALI-1 |
Monolithic Amplifier DC-8 GHz
|
Mini-Circuits
|
| GALI-2 |
Monolithic Amplifier DC-8 GHz
|
Mini-Circuits
|
| GALI-55 |
Monolithic Amplifier DC-4 GHz
|
Mini-Circuits
|
| UPC2712T UPC2712T-E3 |
2.6 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC Corp.
NEC[NEC]
|
| UPC2713T-E3 |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC Corp.
|
| RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
Single-band power amplifiers
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| VNA-21 |
Temp.: -25C to 70C/40C to 70C, Low Ripple & Noise, High Efficiency up to 76%,Single & Dual Ouputs, Regulated, Switching
Monolithic Amplifier 50OHM 0.5 to 2.5 GHz
|
MINI[Mini-Circuits]
|
| VNA-23 |
.: -25C to 70C/40C to 70C, Low Ripple & Noise, High Efficiency up to 76%,Single & Dual Ouputs, Regulated, Switching
High Directivity Monolithic Amplifier 50OHM 0.5 to 2.5 GHz
|
MINI[Mini-Circuits]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
