| PART |
Description |
Maker |
| 106415-2020 |
iPASS High Density AOC Assembly (iPass to-iPass), Multimode, 50/125m, Cable Diameter 3.00mm, Cable Length 20.00m
|
Molex Electronics Ltd.
|
| 106415-2050 |
iPASS High Density AOC Assembly (iPass-to-iPass), Multimode, 50/125m, Cable Diameter 3.00mm, Cable Length 50.00m
|
Molex Electronics Ltd.
|
| ISPLSI2064VE ISPLSI2064VE-100LB100 ISPLSI2064VE-10 |
3.3V In-System Programmable High Density SuperFAST?PLD
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 7 ns, PQFP44
CRYSTAL 16.0 MHZ 20PF SMD EE PLD, 13 ns, PQFP100
CRYSTAL 20.0 MHZ 20PF SMD
RES 180K-OHM 1% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM
3.3V In-System Programmable High Density SuperFAST PLD
3.3V In-System Programmable High Density SuperFAST⑩ PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
280 MHz 3.3V in-system prommable superFAST high density PLD
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| 47151-0001 |
1.0 HDMI RIGHT ANGLE EADER ASSEMBL Y(19 PIN) LEAD FREE
|
Molex Electronics Ltd.
|
| ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
In-System Programmable High Density PLD
100 MHz in-system prommable high density PLD
|
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
http://
|
| 1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/8 |
60 MHz in-system prommable high density PLD
In-System Programmable High Density PLD EE PLD, 25 ns, PQCC68
:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
http://
|
| HDRIGHTANGLE 781-M15-113R141 781-M15-113R001 781-M |
MALE-HIGH DENSITY
MALE-HIGH DENSITY-MACHINED CONTACTS-RIGHT ANGLE
|
List of Unclassifed Manufacturers
|
| ISPLSI2128E-100LT176 ISPLSI2128E-135LT176 ISPLSI21 |
In-SystemProgrammableSuperFASTHighDensityPLD
In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176
In-System Programmable SuperFAST High Density PLD
In-System Programmable SuperFAST⑩ High Density PLD
In-System Programmable SuperFAST?/a> High Density PLD
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V，温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V，温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度，高电压，标准恢复倍流整流（反向电5000V，温25℃时平均整流电流0.4A，高密度，高电压，标准恢复倍增整流器）
|
Semtech Corporation
Semtech, Corp.
|
| ISPLSI5512VA-100LB272 ISPLSI5512VA-70LQ208 5512VA |
70 MHz in-system prommable 3.3V superWIDE high density PLD
In-System Programmable 3.3V SuperWIDE⑩ High Density PLD
In-System Programmable 3.3V SuperWIDE High Density PLD
110 MHz in-system prommable 3.3V superWIDE high density PLD
|
LATTICE[Lattice Semiconductor]
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| ISPLSI5512VE-155LF256 ISPLSI5512VE-155LB272 ISPLSI |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns.
EE PLD, 10 ns, PBGA388
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns.
|
LATTICE SEMICONDUCTOR CORP
|
