| PART |
Description |
Maker |
| BUP202 Q67078-A4401-A2 BUP202SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) 12 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IRG4PSH71U IRG4PSH71UPBF |
99 A, 1200 V, N-CHANNEL IGBT
INSULATED GATE BIPOLAR TRANSISTOR
1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package
|
IRF[International Rectifier]
|
| IRG4CC81KB IRG4CC40RB |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|芯片
IRG4CC81KB IGBT Die in Wafer Form
|
International Rectifier
|
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4RC10KD IRG4RC10 IRG4RC10KDTRR |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 5A条一（c）|52AA
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Microsemi, Corp.
|
| OM6517SA OM6517SW |
1200V DISCRETE Hi-Rel IGBT in a D3 package
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
|
International Rectifier
List of Unclassifed Manufacturers
|
| M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRG4PSH71UD |
99 A, 1200 V, N-CHANNEL IGBT, TO-274AA
INSULATED GATE BIPOLAR TRANSISTOR WITH
1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package
|
IRF[International Rectifier]
|
| APT15GT120BR APT15GT120BRG APT15GT120SRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 15; 36 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| IRGP20B60PD |
INSULATED GATE BIPOLAR TRANSISTOR
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
600V Warp2 150kHz Copack IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation
http://
Microsemi, Corp.
|
