| PART |
Description |
Maker |
| SUB75P03-08 SUP75P03-08 |
P-Channel 30-V (D-S), 175C MOSFET P沟道30 V的（副）75C MOSFET
P-Channel 30-V (D-S) 175C MOSFET
P-Channel MOSFET
P-Channel Enhancement-Mode Transistors
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| DMPH4015SK3-13 |
175C P-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
| DMNH10H028SPSQ-13 |
100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
| DMNH4011SK3Q-13 |
40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
| SUB75N08-10 SUP75N08-10 |
N-Channel Enhancement-Mode Trans
N-Channel 75-V (D-S), 175C MOSFET
N-Channel 75-V (D-S), 175 Degrees Celcious MOSFET
N-Channel 75 N通道75
|
VISAY[Vishay Siliconix]
Vishay Intertechnology, Inc.
|
| DMT8012LK3 DMT8012LK3-13 |
80V N-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
| SUP75N05-06 SUB75N05-06 |
N-Channel 50-V (D-S), 175C MOSFET
N-Channel MOSFET
N-Channel 50-V (D-S), 175C MOSFET
N-Channel Enhancement-Mode Trans
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| NDP408 NDP408A NDP408AE NDP408B NDP408BE NDB408BE |
N-Channel Enhancement Mode Field Effect Transistor2A,80V.9ΩN沟道增强型MOS场效应管（漏电流12A, 漏源电压80V，导通电.9Ω 11 A, 80 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SUD15N06 SUD15N06-90L |
N-Channel 60-V (D-S), 175C MOSFET; Logic Level; N通道60VD-S75MOSFET，逻辑电平
N-Channel 60-V (D-S), 175C MOSFET;
Logic Level;
N-Channel 60-V (D-S), 175C MOSFET, Logic Level
N-Channel 60-V (D-S) 175C MOSFET, Logic Level
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| DMNH3010LK3 DMNH3010LK3-13 |
175C N-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
| FQI9N08 FQB9N08 FQB9N08TM FQI9N08TU |
80V N-Channel MOSFET 9.3 A, 80 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
80V N-Channel QFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
