| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| LB421-14 |
RF POWER LDMOS TRANSISTOR
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF7G27L-140 |
Power LDMOS transistor
|
Philips Semiconductors
|
| LX703-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF8G27LS-100P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF6G20LS-110 BLF6G20-110 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF7G21LS-160 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF7G20L-200 |
Power LDMOS transistor
|
Philips Semiconductors
|
| BLP05M7200-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
