| PART |
Description |
Maker |
| ATF-58143-BLK ATF-58143-TR2G ATF-58143 ATF-58143-B |
C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET ATF-58143 · Single Voltage E-pHEMT Low Noise 30.5 dBm OIP3 in SC-70 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
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AGILENT TECHNOLOGIES INC Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
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| ATF54143 ATF-54143-TR2 ATF-54143-TR1 ATF-54143-BLK |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
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Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
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| ATF-54143 ATF-54143-BLKG ATF-54143-TR2G |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
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AVAGO TECHNOLOGIES LIMITED AVAGO TECHNOLOGIES LIMI...
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| SUP75N04-05L SUB75N04-05L |
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 40V的五(巴西)直| 75A条(丁)| TO - 220AB现有 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) N-Channel Enhancement-Mode Transistors, Logic Level
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Honeywell International, Inc. Vishay
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| ATF-511P8-BLK ATF-511P8-TR2 ATF-511P8-TR1 ATF-511P |
C BAND, Si, N-CHANNEL, RF POWER, HEMFET 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 High Linearity Enhancement Mode ATF-511P8 · Single Voltage E-pHEMT Low Noise 41.7 dBm OIP3 in LPCC
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Agilent Technologies, Inc. HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
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| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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| ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 ATF501P8 |
ATF-501P8 · Single Voltage E-pHEMT Low Noise 45.5 dBm OIP3 in LPCC Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
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Agilent (Hewlett-Packard) Agilent(Hewlett-Packard)
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| BSP75G BSP75G2 |
Ultra Low Capacitance Transient Voltage Suppressor Diodes 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET?/a> MOSFET 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET⑩ MOSFET 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET??MOSFET IntelliFET 60V self protected MOSFET
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List of Unclassifed Manufacturers ETC N.A. Zetex Semiconductors
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| MGA-675T6-TR1G MGA-675T6-TR2G MGA-675T6-BLKG |
Low Noise Amplifi er with Shutdown Mode in Low Profi le Package for 4.9 - 6 GHz Application
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AVAGO TECHNOLOGIES LIMITED
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| APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS 7 500V 35A 0.140 Ohm
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Advanced Power Technology, Ltd.
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| 7105 7104 7111 7101 7109 7102 7110 7107 7106 7119 |
Common Mode RMI Inductors Low Noise, Low Drift Single-Supply Operational Amplifier (Single); Package: PLASTIC DIP; No of Pins: 8; Temperature Range: Industrial Low Noise, Low Drift Single-Supply Operational Amplifier (Single); Package: SOIC; No of Pins: 8; Temperature Range: Industrial Low Noise, Low Drift Single-Supply Operational Amplifier (Single); Package: PLASTIC DIP; No of Pins: 8; Temperature Range: TBD Common Mode EMI Inductors 共模电磁干扰电感 Common Mode EMI Inductors
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List of Unclassifed Manufacturers ETC[ETC] JW Miller Electronic Theatre Controls, Inc. List of Unclassifed Man...
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| APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 1000V 23A 0.450 Ohm
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Advanced Power Technology Ltd.
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