| PART |
Description |
Maker |
| AS8ER128K32_03 AS8ER128K32 AS8ER128K32Q-150_883C A |
128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY
|
AUSTIN[Austin Semiconductor]
|
| 28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
|
Maxwell Technologies, Inc
|
| AS8E128K32Q-300_883C AS8E128K32Q-300_IT AS8E128K32 |
128K x 32 EEPROM EEPROM Memory Array
128K X 32 EEPROM 5V MODULE, 200 ns, CPGA66 1.075 INCH, PGA-66
128K X 32 EEPROM 5V MODULE, 300 ns, CPGA66 1.075 INCH, PGA-66
|
http://
Austin Semiconductor, Inc
Micross Components
|
| 5962-3826707 5962-3826705 5962-3826701 |
128K x 8 EEPROM, MIL-STD-883C, 120ns
128K x 8 EEPROM, CMOS, MIL-STD-883, 150ns
128K EEPROM MIL-STD-883, 250ns
|
Intersil
|
| IMS05SH472J IMS05ST101K IMS05WDST101K40 IMS05RU680 |
General Fixed Inductor, IND,FERRITE,4.7MH,5% TOL,5% -TOL
General Fixed Inductor, IND,FERRITE,100UH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,68UH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,6.8MH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,1.2MH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,56UH,5% TOL,5% -TOL
General Fixed Inductor, 1 ELEMENT, 100 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED, ROHS COMPLIANT
General Fixed Inductor, IND,FERRITE,150UH,5% TOL,5% -TOL
General Fixed Inductor, IND,FERRITE,120UH,5% TOL,5% -TOL
General Fixed Inductor, IND,FERRITE,82UH,5% TOL,5% -TOL
General Fixed Inductor, IND,FERRITE,82UH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,560UH,5% TOL,5% -TOL
|
Vishay Dale
|
| MX26C1000APC-90 MX26C1000ATC-10 MX26C1000AMC-10 MX |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 90 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 100 ns, PDSO32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 70 ns, PQCC32
128K X 8 EEPROM 12V, 150 ns, PDSO32
128K X 8 EEPROM 12V, 150 ns, PQCC32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| WE128K32-120G4MA WE128K32P-300H1CA WE128K32P-300H1 |
128K X 32 EEPROM 5V MODULE, 120 ns, CQFP68
128K X 32 EEPROM 5V MODULE, 300 ns, CPGA66
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
| AT28C010E-12JC AT28C010E-12PC AT28C010E-12TI AT28C |
1 Megabit 128K x 8 Paged CMOS E2PROM
Quadruple Bilateral Analog Switch 14-SOIC -40 to 85
High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 150 ns, PDIP32
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 128K X 8 EEPROM 5V, 150 ns, PQCC32
High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 150 ns, PQCC32
64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 5V, 200 ns, PDSO32
High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 120 ns, PDIP32
Quadruple Bilateral Analog Switch 14-SSOP -40 to 85 128K X 8 EEPROM 5V, 150 ns, PDSO32
|
Atmel Corp.
Atmel, Corp.
|
| GLS29EE010-70-4C-WHE GLS29EE010-70-4C-NHE-T SST29E |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PDSO32
128K X 8 FLASH 5V PROM, 70 ns, PDSO32
128K X 8 FLASH 5V PROM, 90 ns, PQCC32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| SST29EE010-150-4C-EH SST29EE010-250-4C-NH SST29EE0 |
1 Mbit (128K x 8) page-mode EEPROM
From old datasheet system
1 Mbit (128K x8) Page-Mode EEPROM
|
SST[Silicon Storage Technology Inc]
SST[Silicon Storage Technology, Inc]
|
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