| PART |
Description |
Maker |
| EC2-6 EC2 EC2-12ND EC2-12NP EC2-12NU EC2-12NJ EC2- |
High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type
COMPACT AND LIGHTWEIGHT/ SMALL MOUNTING SIZE/ HIGH BREAKDOWN VOLTAGE
High Insulation/ High breakdown voltage/ compact and lightweight/ Surface mounting type
A/D Converter (A-D) IC; Resolution (Bits):24; Sample Rate:192kSPS; Input Channels Per ADC:8; Input Channel Type:Differential; Data Interface:Serial; Package/Case:48-LQFP RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Capacitor Type:Suppression; Voltage Rating:100VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.022uF; Capacitance Tolerance: 10%; Lead Pitch:5.00mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
COMPACT AND LIGHTWEIGHT, SMALL MOUNTING SIZE, HIGH BREAKDOWN VOLTAGE 小巧轻盈，小安装尺寸，高击穿电压
|
NEC Corp.
NEC, Corp.
|
| HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| 2SC3646 |
High-Voltage Switching Applications
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K H |
From old datasheet system
Radiation Hardened Hex Inverter
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
|
INTERSIL[Intersil Corporation]
|
| BFN36 BFN38 Q62702-F1303 Q62702-F1246 |
From old datasheet system
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BF723 BF721 Q62702-F1309 Q62702-F1239 |
From old datasheet system
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) 进步党硅高压晶体管在电视机的视频输出级（适合开关电源和高击穿电压）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| ST7MDT2 ST7MDT2-110 ST7MDT2-220 ST7MDT2-DVP ST7MDT |
A Low-Cost Development Package Including A Full Real-Time Emulation Board(低价格开发软件包)
MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET
MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:51A; On-Resistance, Rds(on):0.36ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-TSOP; Drain-Source Breakdown Voltage:30V
From old datasheet system
MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MMSTA42 |
NPN High Voltage Amplifier
High breakdown voltage
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC5036 2SC5036A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|
