| PART |
Description |
Maker |
| IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBF12N300 |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH28N170A |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH12N300 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBT10N170 IXBH10N170 |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3067 |
High Voltage Monolithic IC
|
Renesas Technology
|
| TPD4113AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| LT3587EUDPBF LT3587EUDTRPBF |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
| 2EX103K1 |
High Voltage Capacitors Monolithic Ceramic Type
|
Semtech
|
| LT3511-15 |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| IXBH5N160G IXBP5N160G |
High Voltage BIMOSFETTM
Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
