| PART |
Description |
Maker |
| EVAL-ADG936EB ADG936 ADG936BCP ADG936BCP-500RL7 AD |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT 宽带4千兆赫，36千兆赫的CMOS 1.65 V分贝.75 V的隔离，双路SPDT
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC20
|
AD[Analog Devices]
Analog Devices, Inc.
ANALOG DEVICES INC
|
| INA-32063 INA-32063-BLK INA-32063-TR2 INA-32063-TR |
3.0千兆赫宽带硅射频放大器（3.0千兆赫宽频带硅射频集成电路放大器
3.0 GHz Wideband Silicon RFIC Amplifier(3.0 GHz 宽频带硅射频集成电路放大
3V Fixed Gain. Wideband Amplifier
|
Agilent(Hewlett-Packard)
|
| ADG936 ADG936-R |
Wideband 4 GHz 36 dB Isolation at 1 GHz CMOS 1.65V to 2.75V Dual SPDT
|
Analog Devices
|
| ADG901BCP-500RL7 ADG901BCP-REEL7 ADG901BRM ADG901B |
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, Absorptive/Reflective Switches
Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches
|
Analog Devices, Inc.
|
| BFG67_XR BFG67 BFG67_X BFG67X BFG67XR BFG67/XR BFG |
NPN 8 GHz wideband transistors
NPN 8GHz wideband transistor(NPN 8G赫兹 宽带晶体
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MC33663 MC33663AJEF MC33663ALEF MC33663ASEF |
LIN 2.1 / SAEJ2602-2 Dual LIN Physical Layer
|
Freescale Semiconductor, Inc
|
| BFG25AW BFG25AW_X BFG25AW/X BFG25X |
NPN 5 GHz wideband transistors C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BFG540 BFG540_X BFG540_XR BFG540/X BFG540/XR |
NPN 9 GHz wideband transistor
|
NXP Semiconductors
|
| BFG25A_X |
NPN 5 GHz wideband transistor
|
NXP Semiconductors
|
