| PART |
Description |
Maker |
| BCR25FR12LB BCR25FR-12LB-15 |
Triac
600V - 25A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
| MAC228A MAC228A10 MAC228A10G MAC228A4 MAC228A6 MAC |
TRIAC 8A 600V
TRIAC 8A 400V
TRIAC 8A 200V
|
ON Semiconductor
|
| BCR3FM-12LBBB0 BCR3FM-12LB-A8BB0 BCR3FM-12LB-15 |
600V - 3A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
| BCR25FM-12LBBB0 BCR25FM-12LBA8BB0 |
600V - 25A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
| BCR12PM-12LDB00 BCR12PM-12LDA8B00 BCR12PM-12LD-15 |
600V - 12A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
| BCR16PM-12LC-15 |
600V ?16A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
| SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 |
THYRISTOR MODULE|TRIAC
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4
TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB
TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50
FUSE 1A FA SMT 1206
TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五（DRM）的| 300口（T）的有效值|00VAR50
TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五（DRM）的| 150A口（T）的有效值|00AB
TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五（DRM）的| 300口（T）的有效值|培训基金，一辆M23
TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五（DRM）的|0A口（T）的有效值|培训基金- M12
TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五（DRM）的| 50A条口（T）的有效值|08VARM8
|
Cornell Dubilier Electronics, Inc.
EPCOS AG
SIEMENS AG
|
| BCR08AM-12A BCR08AM-12A-A6 BCR08AM-12A-TB |
600 V, 0.8 A, TRIAC, TO-92
Triac Low Power Use
|
Renesas Electronics Corporation
|
| STK11C48-5P45 STK11C48-5P45I STK11C48-5P30I STK11C |
Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:30mA
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:D-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:35mA
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:10mA
NVRAM (EEPROM Based)
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A; Holding Current:50mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:V-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:35mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:6A; Gate Trigger Current Max, Igt:35mA NVRAM中（EEPROM的基础
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| X24012SG-3 X24012SG-2.7 X24012SIG-3 X24012SMG ICMI |
TRIAC,TMG10C60,10A,600V TO-220AB,THRUHOLE NON-ISOLATED
Serial E2PROM
TRIAC,TMG10D60,10A,600V TO-220AB,THRUHOLE NON-ISOLATED 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
TRIAC,TMG12C80,12A,800V TO-220AB,THRUHOLE NON-ISOLATED 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
IC MICROSYSTEMS Sdn. Bhd.
Sharp, Corp.
|
| BTA16-600BW3G BTA16-800BW3G BTA16-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA I-GT, 16 A I-T(RMS)
Triacs Silicon Bidirectional Thyristors
600V 16 A, 50mA Igt 3 Quadrant Internally Isolated Triac
|
ON Semiconductor
|
| HST12 |
TRIAC 600V,12A
|
Hi-Sincerity Mocroelectronics
|
